FDC606P Fairchild Semiconductor, FDC606P Datasheet
FDC606P
Manufacturer Part Number
FDC606P
Description
MOSFET P-CH 12V 6A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDC606P.pdf
(5 pages)
Specifications of FDC606P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Input Capacitance (ciss) @ Vds
1699pF @ 6V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.026 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.026Ohm
Drain-source On-volt
12V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC606P
FDC606PTR
FDC606PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC606P
Manufacturer:
Fairchild Semiconductor
Quantity:
40 360
Company:
Part Number:
FDC606P
Manufacturer:
SANYO
Quantity:
600
Part Number:
FDC606P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC606P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC606P_NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDC606P
P-Channel 1.8V Specified PowerTrench
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been
applications.
Applications
• Battery management
• Load switch
• Battery protection
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
P-Channel
optimized
.606
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
for
1.8V
D
battery
D
specified
TM
S
– Continuous
– Pulsed
FDC606P
power
Device
Parameter
D
MOSFET
D
management
G
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• –6 A, –12 V.
• Fast switching speed
• High performance trench technology for extremely
MOSFET
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–12
–20
1.6
0.8
±8
–6
78
30
= 26 mΩ @ V
= 35 mΩ @ V
= 53 mΩ @ V
December 2001
6
5
4
GS
GS
GS
3000 units
FDC606P Rev E (W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C/W
°C
W
V
V
A
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FDC606P Summary of contents
Page 1
... Reel Size 7’’ December 2001 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON Ratings Units –12 V ±8 V –6 A –20 1.6 W 0.8 –55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC606P Rev E (W) ...
Page 2
... – –4 –1.3 A (Note determined by the user's board design. Min Typ Max Units –12 V –3 mV/°C –1 µA 100 nA –100 nA –0.4 –0.5 –1.5 V 2.5 mV/° mΩ – 1699 pF 679 pF 423 142 ns 70 112 4.2 nC –1.3 A –0.6 –1.2 V FDC606P Rev E (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -3.0V -4. DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC606P Rev E ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25° TIME (sec Power Dissipation. R ( θJA θ 156 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC606P Rev E (W) 12 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...