This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 7’’ December 2001 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON Ratings Units –12 V ±8 V –6 A –20 1.6 W 0.8 –55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC606P Rev E (W) ...
... – –4 –1.3 A (Note determined by the user's board design. Min Typ Max Units –12 V –3 mV/°C –1 µA 100 nA –100 nA –0.4 –0.5 –1.5 V 2.5 mV/° mΩ – 1699 pF 679 pF 423 142 ns 70 112 4.2 nC –1.3 A –0.6 –1.2 V FDC606P Rev E (W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -3.0V -4. DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC606P Rev E ( 1.2 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25° TIME (sec Power Dissipation. R ( θJA θ 156 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC606P Rev E (W) 12 100 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...