FDC606P Fairchild Semiconductor, FDC606P Datasheet - Page 3

• Manufacturer Part Number: FDC606P
• Description: MOSFET P-CH 12V 6A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC606P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1699pF @ 6V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.026Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC606P; FDC606PTR

Typical Characteristics
20
15
10
1.3
1.2
1.1
0.9
0.8
20
15
10
5
0
5
0
1
Figure 3. On-Resistance Variation with
0.5
-50
0
Figure 1. On-Region Characteristics.
V
V
Figure 5. Transfer Characteristics.
DS
GS
V
GS
-3.0V
= -5V
I
= -4.5V
D
= -6A
= -4.5V
-25
0.75
0.5
-V
-V
DS
GS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
-2.5V
Temperature.
1
1
25
1.25
1.5
50
-1.8V
T
75
A
1.5
= -55
2
-1.5V
o
o
100
C
C)
1.75
2.5
125
125
o
C
25
o
C
150
2
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
1
2
1
1
0
0
Drain Current and Gate Voltage.
V
V
T
GS
GS
A
= 25
=-1.5V
= 0V
Gate-to-Source Voltage.
o
0.2
C
-V
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
-1.8V
T
2
GS
5
A
, GATE TO SOURCE VOLTAGE (V)
= 125
T
A
-I
= 125
0.4
D
, DRAIN CURRENT (A)
-2.0V
o
C
o
25
C
o
C
-2.5V
10
0.6
3
-55
o
C
-3.0V
0.8
15
4
FDC606P Rev E (W)
-4.5V
I
D
1
= -3A
20
1.2
5