FDC606P Fairchild Semiconductor, FDC606P Datasheet - Page 4

• Manufacturer Part Number: FDC606P
• Description: MOSFET P-CH 12V 6A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC606P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1699pF @ 6V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.026Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC606P; FDC606PTR

Typical Characteristics
0.01
100
0.001
0.1
10
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
0.01
1
Figure 7. Gate Charge Characteristics.
0.1
0.1
0
0.00001
1
R
SINGLE PULSE
I
R
D
DS(ON)
θJA
V
= -6A
T
GS
A
= 156
= 25
D = 0.5
= -4.5V
LIMIT
0.2
5
o
0.1
0.05
o
C
0.02
C/W
0.01
-V
DS
SINGLE PULSE
0.0001
, DRAIN-SOURCE VOLTAGE (V)
Q
DC
1
g
, GATE CHARGE (nC)
1s
10
100ms
10ms
V
DS
Figure 11. Transient Thermal Response Curve.
1ms
= -4V
15
0.001
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
100µs
10
-8V
20
-6V
0.01
25
100
t
1
, TIME (sec)
0.1
2500
2000
1500
1000
10
500
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
C
OSS
-V
0.1
Power Dissipation.
DS
3
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
t
1
10
, TIME (sec)
1
6
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
A
= 156
t
100
1
= P * R
t
2
SINGLE PULSE
10
R
9
θJA
o
T
C/W
A
= 156°C/W
θJA
FDC606P Rev E (W)
= 25°C
f = 1 MHz
V
θJA
1
GS
(t)
/ t
= 0 V
2
1000
100
12