FDC606P Fairchild Semiconductor, FDC606P Datasheet - Page 2

• Manufacturer Part Number: FDC606P
• Description: MOSFET P-CH 12V 6A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC606P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1699pF @ 6V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.026Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC606P; FDC606PTR

Notes:
1. R
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
GS(th)
DSS
pins. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
DSS
J
J
θJC
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
2
pad of 2oz copper on FR-4 board.
(Note 2)
θCA
(Note 2)
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
= 25°C unless otherwise noted
= –10 V,
= V
= –5 V,
= –6 V,
= –6 V,
= 0 V,
= 8 V,
= –8 V,
= –4.5 V,
= –2.5 V,
= –1.8 V,
= –4.5 V, I
= –4.5 V,
= –6 V,
= –4.5 V,
= –4.5 V
= 0 V,
Test Conditions
GS
,
I
S
D
= –1.3 A
I
V
V
V
I
D
D
= –6 A,T
I
I
I
V
I
GS
DS
DS
D
D
D
V
I
I
R
D
= –250 µA
= –250 µA
D
D
GS
DS
= –6 A
= –5 A
= –4 A
GEN
= –6 A,
= 0 V
= 0 V
= –6 A
= –1 A,
= 0 V
= –5 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–12
–20
Typ Max Units
1699
–0.5
–0.6
679
423
2.5
4.2
–3
21
26
34
28
25
11
10
89
70
18
3
–100
–1.5
–1.3
–1.2
100
142
112
–1
26
35
53
35
19
20
25
FDC606P Rev E (W)
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V