FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet

FDC608PZ

Manufacturer Part Number

FDC608PZ

Description

MOSFET P-CH 20V 5.8A SSOT-6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDC608PZ.pdf (5 pages)

Specifications of FDC608PZ

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 5.8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.8A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

23nC @ 4.5V

Input Capacitance (ciss) @ Vds

1330pF @ 10V

Power - Max

800mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.03 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

22 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

5.8 A

Power Dissipation

1600 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

5.8A

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

30mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-1V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC608PZTR

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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Mendoza, Joseph

E-mail: Joseph.Mendoza@notes.fairchildsemi.com

Phone: 63-32-400534

Implementation of change:

Expected 1st Device Shipment Date: 2007/11/24

Earliest Year/Work Week of Changed Product: D0744

Change Type Description: Die Attach Method

Description of Change (From): TiNiAg Backmetal and eutectic die attach process

Description of Change (To): TiNiAg backmetal and skip cure adhesive die attach process

Reason for Change : Process and Device improvement

Qual/REL Plan Numbers : Q20070126

Qualification :

Adhesive Die Attach and TiNiAg backmetal Qualification builds for SSOT-6L pass

assembly level and reliability stress test requirements. Adhesive Die Attach process

and TiNiAg backmetal is recommended for use on SSOT-6L package.

Results/Discussion

Test: (Autoclave)

Lot

Q20070126AAACLV

Q20070126ABACLV

Q20070126ACACLV

Test: (Power Cycle)

Lot

Q20070126AAPRCL

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Device

FDC6401N

Technical Contact:

Name: Mendoza, Joseph

E-mail: Joseph.Mendoza@notes.fairchildsemi.com

Phone: 63-32-400534

Device

FDC6401N

5000-CYCLES

0/77

96-HOURS

0/77

10000-CYCLES 15000-CYCLES Failure Code

0/77

Date Issued On : 2007/05/11

Date Created : 2007/03/30

Failure Code

PCN# : Q1071307

Pg. 1

Related parts for FDC608PZ

FDC608PZ Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... Q20070126AAHAST1 FDC6401N Q20070126ABHAST1 FDC6401N Q20070126ACHAST1 FDC6401N Test: MSL(1), PKG(Small), PeakTemp(260c), Cycles(3) (Precondition) Lot Device Q20070126AAPCNL1A FDC6401N Q20070126ABPCNL1A FDC6401N Q20070126ACPCNL1A FDC6401N Product Id Description : Affected FSIDs : FDC608PZ FDC6302P FDC6303N_NL FDC6320C_NL FDC634P FDC634P_NL FDC638P FDC638P_NF073 FDC640P FDC640P_NF073 FDC642P_F073 FDC642P_NL FDC654P_NBGT006 FDC654P_NL FDC655BN_NBNN007 NDC7003P 0/77 ...

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