FQT4N25TF

Manufacturer Part NumberFQT4N25TF
DescriptionMOSFET N-CH 250V 0.83A SOT-223
ManufacturerFairchild Semiconductor
SeriesQFET™
FQT4N25TF datasheet
 

Specifications of FQT4N25TF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.75 Ohm @ 415mA, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C830mAVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs5.6nC @ 10VInput Capacitance (ciss) @ Vds200pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.75 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)1.28 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current0.83 A
Power Dissipation2500 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (654Kb)Embed
Next
FQT4N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
D
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Ambient *
JA
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Features
• 0.83A, 250V, R
• Low gate charge ( typical 4.3 nC)
• Low Crss ( typical 4.8 pF)
• Fast switching
• Improved dv/dt capability
S
G
SOT-223
FQT Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 70°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
May 2001
QFET
= 1.75
@V
= 10 V
DS(on)
GS
D
!
!
"
"
! "
! "
"
"
G
!
!
"
"
!
!
S
FQT4N25
Units
250
V
0.83
A
0.66
A
3.3
A
30
V
52
mJ
0.83
A
0.25
mJ
5.5
V/ns
2.5
W
0.02
W/°C
-55 to +150
°C
300
°C
Typ
Max
Units
--
50
°C/W
Rev. A, May 2001
TM

FQT4N25TF Summary of contents

  • Page 1

    ... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Features • 0.83A, 250V, R • Low gate charge ( typical 4.3 nC) • Low Crss ( typical 4.8 pF) • Fast switching • Improved dv/dt capability ...

  • Page 2

    ... Repetitive Rating : Pulse width limited by maximum junction temperature 120mH 0.83A 50V ≤ 3.6A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 250 ...

  • Page 3

    ... Drain Current and Gate Voltage 350 300 250 C iss 200 C oss 150 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ 0.2 ...

  • Page 4

    ... T = 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 1.0 0.8 100 0.6 100 ms DC ...

  • Page 5

    ... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

  • Page 6

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 7

    ... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

  • Page 8

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...