IRLM210ATF Fairchild Semiconductor, IRLM210ATF Datasheet
IRLM210ATF
Manufacturer Part Number
IRLM210ATF
Description
MOSFET N-CH 200V 770MA SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.IRLM210ATF.pdf
(7 pages)
Specifications of IRLM210ATF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 390mA, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
770mA
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 5V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Advanced Power MOSFET
*
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 A (Max.) @ V
n Lower R
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
V
V
E
E
, T
I
I
P
T
I
DM
DSS
AR
D
GS
AS
AR
L
D
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
: 1.185
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
*
A
=25
A
A
=25
=70
*
o
C)
DS
o
o
C)
C)
*
= 200V
①
②
①
①
③
Typ.
--
- 55 to +150
0.014
0.77
0.62
±20
0.77
0.18
Value
200
300
6.1
5.0
1.8
27
BV
R
I
1. Gate 2. Drain 3. Source
D
SOT-223
IRLM210A
DS(on)
= 0.77 A
DSS
Max.
69.4
1
= 1.5
= 200 V
3
2
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
Rev. A
W
V
A
V
A
A
C
o
C
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IRLM210ATF Summary of contents
Page 1
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max Lower R : ...
Page 2
IRLM210A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
Page 3
N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Top : 7.0 V 6.0 V 5.5 V 5.0 V 4 3.5 V Bottom : 3 ...
Page 4
IRLM210A Fig 7. Breakdown Voltage vs. Temperature ...
Page 5
N-CHANNEL POWER MOSFET ＂Current Regulator＂ 50K 12V 200nF 300nF V GS 3mA R 1 Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 5V Fig 14. Unclamped Inductive Switching ...
Page 6
IRLM210A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + DUT ...
Page 7
CROSSVOLT â â â â Rev. H5 ...