IRLM210ATF Fairchild Semiconductor, IRLM210ATF Datasheet - Page 4

• Manufacturer Part Number: IRLM210ATF
• Description: MOSFET N-CH 200V 770MA SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of IRLM210ATF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 390mA, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 770mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLM210A
1 0
1 0
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
-1
-2
-3
1
0
1 0
- 7 5
-1
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
@ N o t e s :
Fig 9. Max. Safe Operating Area
1 . T
2 . T
3 . S i n g l e P u l s e
- 2 5
T
V
C
J
J
DS
1 0
= 2 5
= 1 5 0
, Junction Temperature [
0
, Drain-Source Voltage [V]
0
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
10
o
10
10
10
C
o
- 1
C
2
1
0
10
2 5
- 5
0.05
D=0.5
0.2
0.1
0.02
0.01
5 0
DS(on)
1 0
10
1
D C
7 5
- 4
t
1
single pulse
1 0 m s
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
10
1 . V
2 . I
1 m s
o
C]
- 3
1 2 5
1 0 0 s
GS
D
1 0
= 2 5 0 A
2
= 0 V
Fig 11. Thermal Response
1 5 0
10
- 2
1 7 5
10
- 1
@ Notes :
1. Z
2. Duty Factor, D=t
3. T
Fig 10. Max. Drain Current vs. Ambient Temperature
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
1 . 0
0 . 8
0 . 6
0 . 4
0 . 2
0 . 0
P
DM
- 7 5
2 5
J M
10
J A
-T
0
(t)=69.4
- 5 0
A
Fig 8. On-Resistance vs. Temperature
=P
t
D M
1
t
- 2 5
*Z
2
5 0
10
T
T
J
1
o
J A
A
[sec]
C/W Max.
, Junction Temperature [
, Ambient Temperature [
(t)
0
1
/t
2
10
2 5
7 5
2
5 0
POWER MOSFET
10
1 0 0
7 5
N-CHANNEL
3
1 0 0
@ N o t e s :
1 . V
2 . I
o
o
C]
C]
GS
D
1 2 5
1 2 5
= 1 . 6 5 A
= 5 V
1 5 0
1 7 5
1 5 0