SSN1N45BTA Fairchild Semiconductor, SSN1N45BTA Datasheet

MOSFET N-CH 450V 500MA TO-92

SSN1N45BTA

Manufacturer Part Number
SSN1N45BTA
Description
MOSFET N-CH 450V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SSN1N45BTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.25 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
900mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
450 V
Gate-source Breakdown Voltage
+/- 50 V
Continuous Drain Current
0.5 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
SSN1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JL
JA
stg
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
L
= 25°C)
= 25°C)
Parameter
Parameter
T
C
TO-92
SSN Series
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 6a)
(Note 6b)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 0.5A, 450V, R
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• 100% avalanche tested
• Improved dv/dt capability
• Gate-Source Voltage
G
! ! ! !
! ! ! !
DS(on)
Typ
--
--
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
D
! ! ! !
! ! ! !
! ! ! !
! ! ! !
S
SSN1N45B
-55 to +150
● ●
● ●
● ●
● ●
● ●
● ●
= 4.25
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
0.32
0.25
0.02
108
300
450
0.5
4.0
0.5
5.5
0.9
2.5
50V guaranteed
50
@V
Max
140
50
GS
= 10 V
Rev. A, November 2002
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A

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SSN1N45BTA Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Lead JL R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • 0.5A, 450V, R • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 6.5 pF) • 100% avalanche tested • Improved dv/dt capability • Gate-Source Voltage G ...

Page 2

... Reference point of the R is the drain lead JL b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (R is the sum of the junction-to-case and case-to-ambient thermal resistance ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 400 300 C iss C 200 oss C 100 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 0 10 ※ Note : T = 25℃ 0.2 3 ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 0.6 0.5 100 s 0 100 ms 0 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Dimensions in Millimeters Rev. A, November 2002 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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