SSN1N45BTA Fairchild Semiconductor, SSN1N45BTA Datasheet - Page 2

• Manufacturer Part Number: SSN1N45BTA
• Description: MOSFET N-CH 450V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of SSN1N45BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 900mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 50 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 75mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
(R
DSS
≤ 0.5A, di/dt ≤ 300A/ s, V
DSS
JA
T
J
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 1.6A, V
DD
= 50V, R
JL
is the drain lead
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
J
T
= 25°C
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 450 V, V
= 360 V, T
= V
= V
= 50 V, I
= 25 V, V
= 360 V, I
= 0 V, I
= 50 V, V
= -50 V, V
= 10 V, I
= 225 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
GS
, I
, I
D
S
S
D
D
D
D
CA
= 250 A
= 0.5 A
= 0.5 A,
GS
DS
D
D
= 250 A
= 250 mA
DS
= 0.25 A
GS
C
= 0.25 A
= 0.5 A,
is determined by the user’s board design)
= 0.5 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4,5)
(Note 4,5)
(Note 4)
Min
450
2.3
3.5
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0.26
Typ
185
102
0.5
3.0
4.2
3.4
0.7
6.5
7.5
6.5
0.9
3.2
29
21
23
36
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-100
Max
4.25
100
100
240
3.7
4.9
8.5
8.5
0.5
4.0
1.4
10
40
25
50
55
80
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Rev. A, November 2002
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
A
A
V
C
A
A