FDC602P_F095 Fairchild Semiconductor, FDC602P_F095 Datasheet - Page 4

• Manufacturer Part Number: FDC602P_F095
• Description: MOSFET P-CH 20V 5.5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC602P_F095

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1456pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
0
Figure 9. Maximum Safe Operating Area.
1
Figure 7. Gate Charge Characteristics.
0.1
0.001
0.01
R
SINGLE PULSE
R
I
D
0.1
DS(ON)
0.00001
V
= -5.5A
JA
T
1
GS
A
= 156
3
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C/W
C
-V
0.2
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
6
Q
0.01
g
1
, GATE CHARGE (nC)
0.0001
DC
SINGLE PULSE
10s
9
1s
Figure 11. Transient Thermal Response Curve.
V
100ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
=-5.0V
10ms
0.001
12
10
1ms
-15V
100 s
15
-10V
0.01
100
18
t
1
, TIME (sec)
0.1
2000
1600
1200
800
400
50
40
30
20
10
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
-V
Power Dissipation.
D S
5
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
10
10
P(pk)
Duty Cycle, D = t
T
R
J
R
J A
- T
J A
(t) = r(t) + R
A
= 156
100
t
= P * R
1
t
2
15
o
C/W
J A
SINGLE PULSE
1
R
FDC602P Rev C(W)
f = 1 MHz
V
J A
(t)
/ t
GS
J A
T
2
A
= 0 V
1000
20