FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 6

• Manufacturer Part Number: FDD6637
• Description: MOSFET P-CH 35V 13A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6637

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2370pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0116 Ohm @ 10 V
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6637TR

Typical Characteristics
FDD6637 Rev. C2(W)
0.001
0.01
0.1
1
0.001
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Figure 13. Transient Thermal Response Curve
0.1
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
100
J
R
- T
JA
JA
(t) = r(t) * R
A
t
1
= 96 °C/W
= P * R
t
2
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JA
1
JA
(t)
/ t
2
1000