IRF630B_FP001 Fairchild Semiconductor, IRF630B_FP001 Datasheet - Page 5

• Manufacturer Part Number: IRF630B_FP001
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF630B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 25V
• Power - Max: 72W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 72 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Dc: f24
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS630B
Figure 11-1. Transient Thermal Response Curve for IRF630B
- 1
- 2
-1
-2
0
1 0
0
1 0
- 5
-5
D = 0 .5
0 . 0 5
0 . 0 2
0 . 0 1
D = 0 .5
0 . 0 2
0 . 0 5
0 . 0 1
0 . 2
0 . 1
0 . 2
0 . 1
1 0
1 0
s in g le p u ls e
- 4
-4
s in g le p u ls e
(Continued)
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
-3
1 0
1 0
- 2
-2
※ N o te s :
1 0
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
※ N o te s :
- 1
-1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
P
θ J C
J M
DM
DM
- T
θ J C
J M
(t) = 1 .7 4 ℃ /W M a x .
- T
C
(t) = 3 .3 3 ℃ /W M a x .
= P
C
= P
D M
t
t
1
1
t
1 0
t
D M
1 0
* Z
2
2
1
* Z
0
θ J C
0
/t
2
1
/t
θ J C
(t)
2
(t)
1 0
1 0
1
1
Rev. B, December 2002