This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Fall Time f t Turn-Off Time OFF Drain-Source Diode Characteristic V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes Starting T =25 C,L=1mH,I =19A Pulse width=100s FDP8876 Rev 25°C unless otherwise noted A Test Conditions I = 250µ 24V ±20V 250µA GS ...
... If R ≠ (L/R)ln[(I *R)/(1.3*RATED 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 100 T , CASE TEMPERATURE ( C Figure 11. Maximum Continuous Drain Current vs Case Temperature FDP8876 Rev 25°C unless otherwise noted A 5000 1000 100 0 Figure 8. 1000 100 o STARTING SINGLE PULSE - +1] DSS DD ...
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