FDP8876 Fairchild Semiconductor, FDP8876 Datasheet

MOSFET N-CH 30V 70A TO-220

FDP8876

Manufacturer Part Number
FDP8876
Description
MOSFET N-CH 30V 70A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8876

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.7 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0105 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP8876
Manufacturer:
FSC
Quantity:
45 000
Part Number:
FDP8876
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2005 Fairchild Semiconductor Corporation
FDP8876 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
FDP8876
N-Channel PowerTrench
30V, 71A, 8.5mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
J
DS(ON)
DSS
GS
AS
D
θJC
θJA
Symbol
, T
Device Marking
STG
FDP8876
and fast switching speed.
(FLANGE)
DRAIN
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in
C
C
= 25
= 25
FDP8876
Device
FDP SERIES
TO-220AB
o
o
C, V
C, V
GS
GS
= 10V)
= 4.5V)
Parameter
T
A
= 25°C unless otherwise noted
GATE
TO-220AB
Package
DRAIN
SOURCE
®
MOSFET
1
Features
2
r
r
High performance trench technology for extremely low
r
Low gate charge
High power and current handling capability
RoHS Compliant
copper pad area
DS(ON)
DS(ON)
DS(ON)
Reel Size
Tube
= 8.5mΩ, V
= 10.3mΩ, V
GS
GS
Tape Width
= 10V, I
= 4.5V, I
G
N/A
-55 to 175
Ratings
Figure 4
2.14
D
±20
180
30
70
64
70
62
D
S
= 40A
D
= 40A
November 2005
www.fairchildsemi.com
Quantity
50 units
Units
o
o
C/W
C/W
mJ
o
W
V
V
A
A
A
C

Related parts for FDP8876

FDP8876 Summary of contents

Page 1

... Thermal Resistance Junction to Case TO-263 θJC R Thermal Resistance Junction to Ambient TO-263,1in θJA Package Marking and Ordering Information Device Marking Device FDP8876 FDP8876 ©2005 Fairchild Semiconductor Corporation FDP8876 Rev. A ® MOSFET Features r = 8.5mΩ, V DS(ON 10.3mΩ, V DS(ON) High performance trench technology for extremely low ...

Page 2

... Fall Time f t Turn-Off Time OFF Drain-Source Diode Characteristic V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes Starting T =25 C,L=1mH,I =19A Pulse width=100s FDP8876 Rev 25°C unless otherwise noted A Test Conditions I = 250µ 24V ±20V 250µA GS ...

Page 3

... DUTY CYCLE = 0.5% MAX V = 15V DD 120 175 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDP8876 Rev 25°C unless otherwise noted 2.4 2.2 2.0 1 =3.5V 1.6 1 =3V 1.2 1.0 µ S 0.8 0.6 1.5 2.0 2.5 10 Figure 2. 0.016 0.014 ...

Page 4

... If R ≠ (L/R)ln[(I *R)/(1.3*RATED 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 100 T , CASE TEMPERATURE ( C Figure 11. Maximum Continuous Drain Current vs Case Temperature FDP8876 Rev 25°C unless otherwise noted A 5000 1000 100 0 Figure 8. 1000 100 o STARTING SINGLE PULSE - +1] DSS DD ...

Page 5

... Typical Characteristics 2 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 13. FDP8876 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Normolized Maximum Transient Thermal Impedance NOTES: DUTY FACTOR PEAK qJC qJC www.fairchildsemi.com 1 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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