FDP8876 Fairchild Semiconductor, FDP8876 Datasheet - Page 5

• Manufacturer Part Number: FDP8876
• Description: MOSFET N-CH 30V 70A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8876

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8876 Rev. A
Typical Characteristics
0.01
0.1
2
1
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Figure 13.
10
-4
Normolized Maximum Transient Thermal Impedance
T
A
= 25°C unless otherwise noted
10
-3
t, RECTANGULAR PULSE DURATION (s)
5
10
-2
10
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
qJC
P
10
DM
1
/t
0
x R
2
qJC
www.fairchildsemi.com
t
1
+ T
t
2
C
10
1