IRF540A Fairchild Semiconductor, IRF540A Datasheet

MOSFET N-CH 100V 28A TO-220

IRF540A

Manufacturer Part Number
IRF540A
Description
MOSFET N-CH 100V 28A TO-220
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of IRF540A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
107W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Drain-source On-res
0.052Ohm
Drain-source On-volt
100V
Continuous Drain Current
28A
Power Dissipation
107W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540A
Manufacturer:
SEC
Quantity:
206
Part Number:
IRF540A
Manufacturer:
INFINEON
Quantity:
12 500
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
175
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10
Lower R
J
R
R
dv/dt
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
JC
CS
JA
D
L
C
STG
Operating Temperature
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.041
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
Case-to-Sink
A (Max.) @ V
C
=25 )
C
C
=25 )
=100 )
C
DS
C
C
= 100V
O
O
O
O
O
1
2
1
1
3
Typ.
0.5
--
--
- 55 to +175
Value
+ _
19.8
10.7
0.71
300
100
110
523
107
BV
R
I
6.5
1
28
28
2
TO-220
D
3
1.Gate 2. Drain 3. Source
20
DS(on)
= 28 A
DSS
IRF540A
Max.
62.5
1.4
--
= 0.052
= 100 V
Units
Units
W/
V/ns
C
mJ
mJ
W
V
A
A
V
A
/W
C
C
Rev. B

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IRF540A Summary of contents

Page 1

... Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation A (Max 100V DS Characteristic = =100 ) = Characteristic Case-to-Sink IRF540A BV = 100 V DSS R = 0.052 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units V 100 28 A 19.8 110 523 10.7 6.5 V/ns 107 W ...

Page 2

... IRF540A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss rss gd C iss oss rss Drain-Source Voltage [V] DS Fig 2. Transfer Characteristics Fig 4. Source-Drain Diode Forward Voltage Fig 6. Gate Charge vs. Gate-Source Voltage = IRF540A o 175 C @ Notes : 250 s Pulse Test Gate-Source Voltage [ Source-Drain Voltage [ Total Gate Charge [nC ...

Page 4

... IRF540A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area 3 10 Operation in This Area is Limited by R DS(on Notes : 175 Single Pulse - Drain-Source Voltage [ D=0.5 0.2 0 0.05 0.02 0. Fig 8. On-Resistance vs. Temperature 3.0 2.5 2 ...

Page 5

... Vary t to obtain I p required peak DUT 10V t p Fig 12. Gate Charge Test Circuit & Waveform V GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRF540A Charge 90 d(on) r d(off off BV DSS 1 ---- 2 -------------------- DSS DD I (t) D Time (t) DS ...

Page 6

... IRF540A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period I , Body Diode Forward Current Body Diode Reverse Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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