IRF540A Fairchild Semiconductor, IRF540A Datasheet - Page 3

MOSFET N-CH 100V 28A TO-220

IRF540A

Manufacturer Part Number
IRF540A
Description
MOSFET N-CH 100V 28A TO-220
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of IRF540A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
107W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Drain-source On-res
0.052Ohm
Drain-source On-volt
100V
Continuous Drain Current
28A
Power Dissipation
107W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540A
Manufacturer:
SEC
Quantity:
206
Part Number:
IRF540A
Manufacturer:
INFINEON
Quantity:
12 500
POWER MOSFET
0 . 0 8
0 . 0 6
0 . 0 4
0 . 0 2
0 . 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
10
10
10
5 0 0
2
1
0
10
0
10
N-CHANNEL
0
-1
Fig 5. Capacitance vs. Drain-Source Voltage
0
Top :
Bottom : 4.5 V
Fig 3. On-Resistance vs. Drain Current
C
C
C
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 0 V
V
1 5 V
oss
iss
rss
GS
Fig 1. Output Characteristics
V
V
DS
3 0
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
, Drain Current [A]
10
0
@ Notes :
C
C
C
iss
oss
rss
6 0
1. 250 s Pulse Test
2. T
= C
= C
= C
C
V
GS
gs
ds
gd
10
= 25
+ C
+ C
1
= 1 0 V
gd
gd
o
C
( C
V
@ N o t e : T
GS
ds
9 0
= s h o r t e d )
= 20 V
@ N o t e s :
1 . V
2 . f = 1 M H z
10
1
GS
J
= 2 5
= 0 V
o
C
1 2 0
10
10
10
1 0
1 0
1 0
1 0
2
1
0
2
1
0
5
0
0 . 4
2
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
1 7 5
0 . 6
o
25
C
1 0
o
2 5
Fig 2. Transfer Characteristics
C
0 . 8
175
o
C
V
V
SD
Q
GS
o
4
C
G
2 0
, Source-Drain Voltage [V]
V
1 . 0
, Gate-Source Voltage [V]
DS
, Total Gate Charge [nC]
- 55
V
= 8 0 V
DS
1 . 2
V
= 5 0 V
o
DS
C
3 0
= 2 0 V
1 . 4
6
IRF540A
4 0
@ Notes :
1 . 6
1. V
2. V
3. 250 s Pulse Test
@ N o t e s :
1 . V
2 . 2 5 0 s P u l s e T e s t
GS
DS
@ N o t e s : I
1 . 8
GS
= 0 V
= 40 V
5 0
= 0 V
8
2 . 0
D
= 2 8 . 0 A
6 0
2 . 2
2 . 4
10
7 0

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