FQPF8N60CFT Fairchild Semiconductor, FQPF8N60CFT Datasheet - Page 2

• Manufacturer Part Number: FQPF8N60CFT
• Description: MOSFET N-CH 600V 6.26A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF8N60CFT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1255pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF8N60CF Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
FQPF8N60CFT
J
DSS
≤ 6.26A, di/dt ≤200A/µs, V
DSS
/
AS
= 6.26A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
FQPF8N60CFT
≤ BV
Device
Parameter
G
DSS,
= 25 Ω, Starting T
Starting T
J
T
= 25°C
C
= 25°C unless otherwise noted
J
= 25°C
Package
TO-220F
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 600 V, V
= 480 V, T
= V
= 40 V, I
= 25 V, V
= 480 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 300 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
D
D
= 6.26 A
= 6.26 A,
= 250 µA
DS
GS
D
D
= 250 µA
DS
=3.13 A
GS
C
= 3.13 A
--
= 6.26A,
= 6.26A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
--
600
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
1.25
16.5
60.5
64.5
105
242
965
0.7
8.7
4.5
12
81
28
12
82
--
--
--
--
--
--
--
--
--
Quantity
Max Units
1255
-100
6.26
100
100
135
130
170
140
4.0
1.5
1.4
www.fairchildsemi.com
25
10
16
45
36
--
--
--
--
--
--
--
50
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V