FQPF9N50CF Fairchild Semiconductor, FQPF9N50CF Datasheet - Page 7

• Manufacturer Part Number: FQPF9N50CF
• Description: MOSFET N-CH 500V 9A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF9N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 44W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 44 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 64 ns
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF9N50CF Rev. A
Mechanical Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
±0.20
±0.10
±0.10
]
10.16
9.40
#1
(7.00)
±0.20
±0.20
[2.54
2.54TYP
TO-220F
±0.20
ø3.18
7
]
±0.10
(1.00x45°)
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
±0.20
±0.20
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