FDB44N25TM Fairchild Semiconductor, FDB44N25TM Datasheet
FDB44N25TM
Specifications of FDB44N25TM
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FDB44N25TM Summary of contents
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... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FDB44N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...
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... Package Marking and Ordering Information Device Marking Device FDB44N25 FDB44N25TM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area ...
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3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDB44N25 ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB44N25 Rev A Peak Diode Recovery ...
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Mechanical Dimensions FDB44N25 Rev A D2-PAK 7 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...