FQH44N10_F133 Fairchild Semiconductor, FQH44N10_F133 Datasheet

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FQH44N10_F133

Manufacturer Part Number
FQH44N10_F133
Description
MOSFET N-CH 100V 48A TO-247
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQH44N10_F133

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.039 Ohms
Forward Transconductance Gfs (max / Min)
31 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
48 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FQH44N10_F133
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
TO-247
FQH Series
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 48A, 100V, R
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G
DS(on)
0.24
Typ
--
--
FQH44N10_F133
-55 to +175
= 0.039Ω @V
± 25
100
192
530
180
300
6.0
1.2
D
48
34
48
18
S
Max
0.83
40
--
QFET
GS
Octorber 2008
= 10 V
Rev. A, October 2008
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQH44N10_F133 Summary of contents

Page 1

... FQH Series T = 25°C unless otherwise noted C Parameter = 25° 100°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter 1 Octorber 2008 QFET = 0.039Ω DS(on FQH44N10_F133 Units 100 192 A ± 530 6.0 V/ns 180 W 1.2 W/°C -55 to +175 °C 300 °C ...

Page 2

... G ≤ 43.5A, di/dt ≤ 300A/μs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 μ 250 μA, Referenced to 25°C ...

Page 3

... D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4000 3500 3000 2500 C iss C 2000 oss 1500 C 1000 rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation ∝ Notes : 1. 250 レ s Pulse Test 25∩ Figure 2. Transfer Characteristics 10V 20V ...

Page 4

... DS(on ∝ Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ∝ 0 250 レ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation μ s 100 μ ∝ ...

Page 5

... Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform 5 Rev. A, October 2008 ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 6 Rev. A, October 2008 ...

Page 7

... Package Dimensions ©2008 Fairchild Semiconductor Corporation TO-247AB 7 Dimensions in Millimeters Rev. A, October 2008 ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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