FQH44N10_F133 Fairchild Semiconductor, FQH44N10_F133 Datasheet - Page 6

• Manufacturer Part Number: FQH44N10_F133
• Description: MOSFET N-CH 100V 48A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQH44N10_F133

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 48 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
©2008 Fairchild Semiconductor Corporation
Rev. A, October 2008