MOSFET N-CH 250V 59A TO-3P

FDA59N25

Manufacturer Part NumberFDA59N25
DescriptionMOSFET N-CH 250V 59A TO-3P
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDA59N25 datasheet
 

Specifications of FDA59N25

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs49 mOhm @ 29.5A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C59AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs82nC @ 10VInput Capacitance (ciss) @ Vds4020pF @ 25V
Power - Max392WMounting TypeThrough Hole
Package / CaseTO-3PN-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.049 Ohms
Forward Transconductance Gfs (max / Min)45 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current59 A
Power Dissipation392 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Continuous Drain Current Id59ADrain Source Voltage Vds250V
On Resistance Rds(on)49mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ5VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDA59N25
250V N-Channel MOSFET
Features
• 59A, 250V, R
= 0.049Ω @V
DS(on)
• Low gate charge (typical 63 nC)
• Low C
(typical 70 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
D
S
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
V
Repetitive Avalanche Voltage
DS(Avalanche)
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. A
V
= 250V
DS
V
DS(Avalanche)
R
DS(on)
Description
= 10 V
These N-Channel enhancement mode power field effect transis-
GS
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
TO-3PN
FDA Series
Parameter
(Note 1, 2)
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
September 2005
UniFET
= 300V
Typ. @10V = 41mΩ
D
G
S
FDA59N25
Unit
250
300
59
35
236
±30
1458
59
39.2
4.5
V/ns
392
3.2
W/°C
-55 to +150
300
Min.
Max.
Unit
°C/W
--
0.32
°C/W
0.24
--
°C/W
--
40
www.fairchildsemi.com
TM
V
V
A
A
A
V
mJ
A
mJ
W
°C
°C

FDA59N25 Summary of contents

  • Page 1

    ... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDA59N25 Rev 250V DS V DS(Avalanche) R DS(on) Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

  • Page 2

    ... DD G ≤ 59A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA59N25 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Conditions 250µA ...

  • Page 3

    ... GS 0.06 0.03 0. Drain Current [A] D Figure 5. Capacitance Characteristics 8000 6000 C oss C iss 4000 2000 C rss Drain-Source Voltage [V] DS FDA59N25 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage 20V GS ° * Note : 100 125 ...

  • Page 4

    ... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDA59N25 Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : µ 250 A D 100 150 200 ° C] Figure 10. Maximum Drain Current µ µ 100 100 ms * Notes : ° ...

  • Page 5

    ... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDA59N25 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

  • Page 6

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA59N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

  • Page 7

    ... Mechanical Dimensions FDA59N25 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDA59N25 Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...