MOSFET N-CH 500V 20A TO-220F

FDPF20N50

Manufacturer Part NumberFDPF20N50
DescriptionMOSFET N-CH 500V 20A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF20N50 datasheet
 

Specifications of FDPF20N50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs230 mOhm @ 10A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs59.5nC @ 10VInput Capacitance (ciss) @ Vds3120pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.23 Ohms
Forward Transconductance Gfs (max / Min)24.6 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current20 A
Power Dissipation38.5 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve - FDP20N50
0
1 0
D = 0 .5
0 . 2
-1
1 0
0 .1
0 . 0 5
0 .0 2
0 . 0 1
-2
1 0
-5
1 0
Figure 11-2. Transient Thermal Response Curve - FDPF20N50
D = 0 . 5
0
1 0
0 .2
0 .1
0 . 0 5
- 1
1 0
0 . 0 2
0 .0 1
- 2
1 0
-5
1 0
FDP20N50 / FDPF20N50 Rev. C
(Continued)
P
DM
* N o t e s :
1 . Z
( t ) = 0 . 5
θ
J C
s in g le p u ls e
2 . D u t y F a c t o r , D = t
3 . T
- T
J M
-4
-3
- 2
-1
1 0
1 0
1 0
1 0
t
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1
P
DM
* N o t e s :
1 . Z
( t ) = 3 . 3
θ
J C
s in g le p u ls e
2 . D u t y F a c t o r , D = t
3 . T
- T
J M
- 4
-3
-2
- 1
1 0
1 0
1 0
1 0
t
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1
5
t
1
t
2
o
C / W M a x .
/t
1
2
= P
* Z
( t )
C
D M
θ
J C
0
1
1 0
1 0
t
1
t
2
o
C / W M a x .
/ t
1
2
= P
* Z
( t )
θ
C
D M
J C
0
1
1 0
1 0
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