FDP047N08 Fairchild Semiconductor, FDP047N08 Datasheet

MOSFET N-CH 75V 164A TO-220

FDP047N08

Manufacturer Part Number
FDP047N08
Description
MOSFET N-CH 75V 164A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP047N08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
164A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
9415pF @ 25V
Power - Max
268W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0047 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
164 A
Power Dissipation
268000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDP047N08 Rev. A
MOSFET Maximum Ratings
*
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
R
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
D
DM
FDP047N08
N-Channel PowerTrench
75V, 164A, 4.7mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
J
L
DSS
GSS
AS
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 3.8mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
D
= 80A
T
C
TO-220
FDP Series
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted*
= 25
MOSFET
o
C)
DS(on)
C
C
= 25
= 100
1
o
C
o
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
-55 to +175
Ratings
Ratings
164*
116*
1.79
0.56
62.5
±20
656
670
268
300
3.0
0.5
75
S
D
March 2008
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm

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FDP047N08 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP047N08 Rev. A ® MOSFET Description = 80A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 75A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP047N08 Rev unless otherwise noted C Package Reel Size TO-220 - Test Conditions I = 250µA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 12000 C iss = oss = rss = iss 8000 C oss 4000 C rss 0 0 Drain-Source Voltage [V] DS FDP047N08 Rev. A Figure 2. Transfer Characteristics 500 100 10 µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 V = 20V *Note: T ...

Page 4

... Operation in This Area 10 is Limited by R DS(on) *Notes Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDP047N08 Rev. A (Continued) Figure 8. On-Resistance Variation vs. 2.5 2.0 1.5 1.0 *Notes 10mA D 0.5 100 150 200 180 µ 150 µ ...

Page 5

... FDP047N08 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP047N08 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDP047N08 Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP047N08 Rev. A FPS™ PDP-SPM™ ® FRFET Power220 Global Power Resource SM POWEREDGE Green FPS™ Power-SPM™ Green FPS™ e-Series™ ...

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