FDP047N08 Fairchild Semiconductor, FDP047N08 Datasheet - Page 4

• Manufacturer Part Number: FDP047N08
• Description: MOSFET N-CH 75V 164A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP047N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 164A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9415pF @ 25V
• Power - Max: 268W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 164 A
• Power Dissipation: 268000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP047N08 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1000
1.15
1.10
1.05
1.00
0.95
0.90
100
0.1
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
1E-3
0.01
0
DS(on)
0.1
2
1
10
0.1
0.02
0.01
0.05
0.5
0.2
-5
Single pulse
50
*Notes:
10
1. T
2. T
3. Single Pulse
DC
10ms
C
J
Figure 11. Transient Thermal Response Curve
= 175
= 25
100
10
1ms
o
-4
*Notes:
o
C
100
C
[
1. V
2. I
o
C
D
µ
150
GS
]
s
= 10mA
30
= 0V
Rectangular Pulse Duration [sec]
µ
s
10
200
100
-3
(Continued)
10
-2
4
Figure 8. On-Resistance Variation vs.
180
150
120
2.5
2.0
1.5
1.0
0.5
90
60
30
-100
0
25
10
Limited by package
*Notes:
-1
Figure 10. Maximum Drain Current
1. Z
2. Duty Factor, D= t
3. T
P
DM
-50
θ
JM
50
JC
T
Temperature
T
- T
(t) = 0.56
J
vs. Case Temperature
C
, Junction Temperature
, Case Temperature
C
t
= P
1
t
75
1
0
2
DM
o
C/W Max.
* Z
1
/t
θ
JC
100
2
50
(t)
10
100
125
[
o
*Notes:
C
[
1. V
2. I
]
o
C
D
150
]
150
GS
= 80A
www.fairchildsemi.com
= 10V
200
175