FDP8030L Fairchild Semiconductor, FDP8030L Datasheet - Page 2

• Manufacturer Part Number: FDP8030L
• Description: MOSFET N-CH 30V 80A TO220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8030L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 5V
• Input Capacitance (ciss) @ Vds: 10500pF @ 15V
• Power - Max: 187W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 170 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 187000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
I
V
f
AR
DSS
GSSF
GSSR
D(on)
D(on)
r
D (off)
S
SM
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
T
T
DSS
J
J
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain–Source Diode Forward Voltage
Parameter
(Note 2)
(Note 2)
(Note 1)
T
V
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
I
A
D
D
D
= 25°C unless otherwise noted
DD
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 80 A, V
V
= 24 V,
= V
= 10 V,
= 15 V,
= 15 V,
GS
= 20 V,
= 0 V, I
= 20 V,
= –20 V
= 10 V,
= 4.5 V,
= 10 V,
= 15 V,
= 4.5 V,
= 10
Test Conditions
= 0 V,
GS
, I
D
D
GS
= 250 A
= 250 A
= 5 V
I
V
V
I
D
V
S
I
T
I
V
GS
DS
D
D
V
I
I
R
DS
= 80 A
= 80 A
J
D
D
GS
=125 C
DS
= 80 A
= 70 A
GEN
= 0 V
= 0 V
= 80 A
= 50 A,
= 0 V
= 0 V,
= 10 V
(Note 1)
(Note 1)
= 10
(Note 1)
Min
30
60
1
10500
Typ Max Units
2700
1650
170
185
160
200
120
1.5
3.1
4.0
3.6
23
–5
20
27
48
1
1500
–100
100
225
200
240
170
300
3.5
5.6
4.5
1.3
80
10
35
80
2
FDP8030L Rev C(W)
mV/ C
mV/ C
m
mJ
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S
A
A
V
A