FDA69N25 Fairchild Semiconductor, FDA69N25 Datasheet

MOSFET N-CH 250V 69A TO-3P

FDA69N25

Manufacturer Part Number
FDA69N25
Description
MOSFET N-CH 250V 69A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA69N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
41 mOhm @ 34.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4640pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.041 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
69 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA69N25
Manufacturer:
ST
Quantity:
5 000
Part Number:
FDA69N25
Manufacturer:
FAIRCHILD
Quantity:
4 221
©2006 Fairchild Semiconductor Corporation
FDA69N25 Rev. A
FDA69N25
250V N-Channel MOSFET
Features
• 69A, 250V, R
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
DS(Avalanche)
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.041Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
Parameter
TO-3PN
FDA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDA69N25
-55 to +150
S
FDA69N25
1894
D
44.2
± 30
3.84
250
300
276
480
300
4.5
69
69
48
0.26
40
UniFET
May 2006
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
V
A
A
A
V
A
TM

Related parts for FDA69N25

FDA69N25 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDA69N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 50V ≤ 69A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FDA69N25 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... GS 0.06 0. 100 I , Drain Current [A] D Figure 5. Capacitance Characteristics 9000 C 6000 oss C iss 3000 C rss Drain-Source Voltage [V] DS FDA69N25 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V GS ° ...

Page 4

... J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FDA69N25 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 0 250 A D 0.0 100 150 200 -100 ° C] Figure 10. Maximum Drain Current 80 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDA69N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA69N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA69N25 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDA69N25 Rev. A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...

Related keywords