FDA69N25 Fairchild Semiconductor, FDA69N25 Datasheet - Page 4

• Manufacturer Part Number: FDA69N25
• Description: MOSFET N-CH 250V 69A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA69N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 34.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4640pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.041 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 69 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA69N25 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
10
-100
-1
-2
3
2
1
0
10
0
vs. Temperature
Operation in This Area
is Limited by R
-50
T
J
, Junction Temperature [
DS(on)
V
0
DS
, Drain-SourceVoltage[V]
10
1
50
10
10
10
DC
-1
-2
0
10
100ms
-5
* Notes :
100
0.05
D=0.5
0.02
0.01
0.1
1. T
2. T
3. Single Pulse
0.2
°
10ms
C]
C
J
= 150
= 25
* Notes :
1ms
1. V
2. I
10
10
o
D
C
o
GS
C
2
= 250
100
-4
150
= 0 V
t
1
single pulse
µ
µ
, Square Wave Pulse Duration [sec]
10
A
s
µ
s
10
200
-3
(Continued)
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
80
70
60
50
40
30
20
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
-100
* Notes :
1. Z
2. Duty Factor, D=t
3. T
10
P
-1
θ
JM
DM
JC
(t) = 0.26
- T
vs. Temperature
C
vs. Case Temperature
= P
-50
50
t
DM
1
t
0
2
10
C/W Max.
* Z
1
0
/t
θ
JC
2
T
(t)
T
J
C
, Junction Temperature [
, Case Temperature [
0
75
10
1
50
100
100
o
C]
°
C]
125
* Notes :
1. V
2. I
150
www.fairchildsemi.com
D
GS
= 34.5 A
= 10 V
150
200