FDP047AN08A0 Fairchild Semiconductor, FDP047AN08A0 Datasheet
FDP047AN08A0
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FDP047AN08A0 Summary of contents
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... Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V systems T = 25°C unless otherwise noted C Parameter 10V 10V, with C/W) GS θJA September 2010 Ratings Units ± Figure 4 A 475 mJ 310 -55 to 175 C o 0. C/W FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 ...
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... Tape Width Quantity Tube N/A 50 units Tube N/A 50 units Tube N/A 30 units Min Typ Max 150 250 ±100 0.0040 0.0047 - 0.0058 0.0087 - 0.0082 0.011 - 6600 - - 1000 - - 240 - 92 138 - 40V DD = 80A - 1.0mA - 160 - 128 - - 1. 1 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 Units V µ Ω ...
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... RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 175 ...
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... AS DSS DD *R)/(1.3*RATED +1] AS DSS DD STARTING 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.5 1 DRAIN TO SOURCE VOLTAGE ( 10V 80A 120 160 JUNCTION TEMPERATURE ( C) J FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev 100 o C 1.5 200 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant I = 250µ 120 JUNCTION TEMPERATURE ( 40V DD WAVEFORMS IN DESCENDING ORDER 80A 10A GATE CHARGE (nC) g Gate Currents FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 160 200 100 ...
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... Fairchild Semiconductor Corporation DUT 0.01Ω Figure 16. Unclamped Energy Waveforms DUT g(REF) 0 Figure 18. Gate Charge Waveforms DUT V GS 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT gs2 Q g(TH OFF t t d(ON) d(OFF 90% 10% 90% 50% 50% PULSE WIDTH FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev 10V 90% 10% ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + - 19 LGATE EVTEMP 8 RGATE RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 DRAIN 2 SOURCE 3 ...
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... LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY 16 21 MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower¥ F-PFS¥ FRFET Auto-SPM¥ Build it Now¥ Global Power Resource CorePLUS¥ ...