FDP047AN08A0 Fairchild Semiconductor, FDP047AN08A0 Datasheet - Page 2

• Manufacturer Part Number: FDP047AN08A0
• Description: MOSFET N-CH 75V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP047AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 138nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
VDSS
GS(TH)
SD
ISS
OSS
RSS
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
FDP047AN08A0
FDH047AN08A0
Device Marking
FDI047AN08A0
J
= 25°C, L = 0.232mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
FDP047AN08A0
FDH047AN08A0
Parameter
FDI047AN08A0
= 64A.
Device
(V
GS
= 10V)
T
C
= 25°C unless otherwise noted
TO-220AB
TO-262AB
Package
TO-247
I
V
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DS
GS
GS
GS
J
DS
GS
GS
DD
GS
= 250µA, V
= 80A, V
= 37A, V
= 80A, V
= 175
= 80A
= 40A
= 75A, dI
= 75A, dI
= 60V
= 25V, V
= 0V
= ±20V
= V
= 0V to 10V
= 0V to 2V
= 40V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 80A
= 250µA
= 10V
= 6V
= 10V,
/dt = 100A/µs
/dt = 100A/µs
Reel Size
= 0V,
= 0V
= 3.3Ω
T
V
I
I
D
g
Tube
Tube
Tube
C
DD
= 1.0mA
= 80A
= 150
= 40V
o
C
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1
Tape Width
Min
75
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N/A
N/A
N/A
0.0040 0.0047
0.0058 0.0087
0.0082
6600
1000
Typ
240
92
11
27
16
21
18
88
40
45
-
-
-
-
-
-
-
-
-
-
-
0.011
±100
Max
1.25
250
138
160
128
1.0
17
53
54
Quantity
1
4
-
-
-
-
-
-
-
-
-
-
-
30 units
50 units
50 units
Units
nA
nC
nC
nC
nC
nC
nC
µA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V