FDFS2P103 Fairchild Semiconductor, FDFS2P103 Datasheet - Page 4

• Manufacturer Part Number: FDFS2P103
• Description: MOSFET P-CH 30V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P103

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 59 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.059 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P103TR; FDFS2P103_NL; FDFS2P103_NLTR; FDFS2P103_NLTR

Typical Characteristics
15
12
9
6
3
0
1.6
1.4
1.2
0.8
0.6
30
20
10
Figure 3. On-Resistance Variation with
0
1
1
-50
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
GS
V
V
I
D
DS
GS
-25
= -10V
1.5
= -5.3A
= -5V
= -10V
1
-V
-V
0
T
GS
DS
J
2
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
-6.0V
25
2
2.5
50
-5.0V
3
75
3
T
-4.5V
A
100
= -55
4
3.5
-4.0V
o
o
C)
C
125
-3.5V
-3.0V
125
5
4
o
150
C
25
o
C
175
4.5
6
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.25
0.15
0.05
0.001
0.2
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
100
0.1
0
10
2
1
1
2
0
0
Drain Current and Gate Voltage.
T
A
= 25
V
V
GS
GS
Gate-to-Source Voltage.
o
0.2
C
=-4.0V
=0 V
-V
SD
6
-4.5V
-V
, BODY DIODE FORWARD VOLTAGE (V)
T
4
GS
A
, GATE TO SOURCE VOLTAGE (V)
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
o
0.6
C
25
6
-7.0V
o
C
0.8
18
-55
o
-8.0V
C
1
8
FDFS2P103 Rev C(W)
24
I
D
-10V
1.2
= -2.8A
1.4
30
10