FQPF13N10 Fairchild Semiconductor, FQPF13N10 Datasheet - Page 3

• Manufacturer Part Number: FQPF13N10
• Description: MOSFET N-CH 100V 8.7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF13N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 4.35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
900
750
600
450
300
150
10
10
10
0.8
0.6
0.4
0.2
0.0
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
10
, Drain Current [A]
0
0
V
V
GS
20
GS
= 20V
= 10V
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
30
※ Note : T
gs
10
gd
ds
1
C
+ C
+ C
= 25℃
1
gd
gd
(C
※ Notes :
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
40
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
25℃
0.4
175℃
175℃
Variation vs. Source Current
2
0.6
4
V
V
GS
Q
and Temperature
25℃
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
4
, Total Gate Charge [nC]
0.8
-55℃
V
DS
V
= 80V
1.0
DS
6
6
= 50V
1.2
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 40V
= 0V
10
D
1.6
= 12.8A
Rev. A1, January 2001
1.8
10
12