FQPF13N10 Fairchild Semiconductor, FQPF13N10 Datasheet - Page 4

• Manufacturer Part Number: FQPF13N10
• Description: MOSFET N-CH 100V 8.7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF13N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 4.35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
10
DC
= 175
= 25
- 5
1
DS(on)
0 .0 2
0 .0 1
D = 0 . 5
0 .0 5
0 .2
0 .1
o
50
C
100 ms
o
C
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
1 ms
※ Notes :
1. V
2. I
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
100 s
10
2
1 0
- 3
200
1 0
- 2
9.0
7.5
6.0
4.5
3.0
1.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50
DM
50
θ J C
J M
- T
( t ) = 5 . 0 ℃ /W M a x .
vs. Case Temperature
C
T
= P
vs. Temperature
T
J
t
, Junction Temperature [
1
C
75
t
0
, Case Temperature [ ℃ ]
1 0
D M
2
* Z
0
1
θ J C
/t
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 6.4 A
= 10 V
Rev. A1, January 2001
200
175