HUFA76609D3S Fairchild Semiconductor, HUFA76609D3S Datasheet - Page 8

• Manufacturer Part Number: HUFA76609D3S
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76609D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 425pF @ 25V
• Power - Max: 49W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SABER Electrical Model
REV 23 August 1999
template hufa76609d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 1.2e-12, n = 1.05, cjo = 6.7e-10, tt = 6.9e-8, m = 0.77)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 4.3e-10, is = 1e-30, n = 10, m = 0.9 )
m..model mmedmod = (type=_n, vto = 1.88, kp = 5, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.13, kp = 12.4, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.59, kp = 0.12, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -4.5, voff = -2.5)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.5, voff = -4.5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.3, voff = 0.2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = -0.3)
c.ca n12 n8 = 7.5e-10
c.cb n15 n14 = 7.6e-10
c.cin n6 n8 = 4.03e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 3.7e-9
l.lsource n3 n7 = 3.4e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = -5e-7
res.rdbody n71 n5 = 1.2e-2, tc1 = 1.2e-3, tc2 = 1.03e-6
res.rdbreak n72 n5 = 9.9e-1, tc1 = 1e-3, tc2 = -2e-5
res.rdrain n50 n16 = 9.4e-2, tc1 = 8.1e-3, tc2 = 2.4e-5
res.rgate n9 n20 = 3.3
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 37
res.rlsource n3 n7 = 34
res.rslc1 n5 n51 = 1e-6, tc1 = 3e-3, tc2 = 2e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.3e-2, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.6e-3, tc2 = 1.5e-6
res.rvthres n22 n8 = 1, tc1 = -1.5e-3, tc2 = -4.3e-6
spe.ebreak n11 n7 n17 n18 = 116.7
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/17.3))** 3.5))
}
}
©2002 Fairchild Semiconductor Corporation
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
8
RDBREAK
DBREAK
IT
RSOURCE
MWEAK
17
EBREAK
RVTHRES
RBREAK
72
11
+
HUFA76609D3, HUFA76609D3S Rev. B
-
17
18
7
+
-
18
22
RVTEMP
19
71
RLSOURCE
RLDRAIN
LSOURCE
VBAT
RDBODY
DBODY
LDRAIN
SOURCE
DRAIN
2
3