FQAF16N25C Fairchild Semiconductor, FQAF16N25C Datasheet

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FQAF16N25C

Manufacturer Part Number
FQAF16N25C
Description
MOSFET N-CH 250V 11.4A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQAF16N25C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
11.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53.5nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
73W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQAF16N25C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
FQAF16N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQAF Series
C
C
= 25°C unless otherwise noted
TO-3PF
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 11.4A, 250V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
Typ
DS(on)
--
--
FQAF16N25C
-55 to +150
D
S
= 0.27Ω @V
45.6
± 30
0.59
11.4
11.4
250
410
300
7.2
7.3
5.5
73
Max
1.7
40
QFET
GS
= 10 V
Units
Units
Rev. A, March 2004
W/°C
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQAF16N25C Summary of contents

Page 1

... C Parameter QFET = 0.27Ω DS(on ● ● ◀ ◀ ▲ ▲ G ● ● ● ● S FQAF16N25C Units 250 11.4 7.2 45.6 ± 30 410 mJ 11.4 7.3 mJ 5.5 V/ns 73 0.59 W/°C -55 to +150 300 Typ Max Units -- 1.7 ° ...

Page 2

... ≤ 11.4A, di/dt ≤ 300A/µs, V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C I ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss ※ Notes : 500 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ Note : ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve ©2004 Fairchild Semiconductor Corporation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 15 10 µ s µ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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