FQAF16N25C Fairchild Semiconductor, FQAF16N25C Datasheet - Page 4

• Manufacturer Part Number: FQAF16N25C
• Description: MOSFET N-CH 250V 11.4A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF16N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 11.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 73W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area
-1
-100
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
C
T
Operation in This Area
is Limited by R
V
vs Temperature
J
DS
, Junction Temperature [
1 0
1 0
1 0
, Drain-Source Voltage [V]
0
-1
-2
10
1 0
0
1
-5
D = 0 . 5
DS(on)
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
(Continued)
50
Figure 11. Transient Thermal Response Curve
DC
1 0
10 ms
100
-4
s in g le p u ls e
o
C]
1 ms
t
10
1
※
2
, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
1. V
2. I
100
Notes :
D
GS
10
= 250 µA
150
µ
= 0 V
s
µ
s
1 0
-3
200
1 0
-2
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
-100
※
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 10. Maximum Drain Current
N o te s :
Figure 8. On-Resistance Variation
-1
P
θ
J M
J C
DM
( t ) = 1 .7
- T
-50
50
C
= P
vs Case Temperature
t
D M
℃
1
T
T
1 0
t
2
J
C
* Z
vs Temperature
/W M a x .
, Junction Temperature [
, Case Temperature [ ]
0
0
1
θ
/t
J C
75
2
( t)
50
1 0
100
1
℃
100
o
C]
125
※
1. V
2. I
150
Notes :
D
GS
= 5.7 A
= 10 V
150
Rev. A, March 2004
200