FQPF6N80 Fairchild Semiconductor, FQPF6N80 Datasheet - Page 4

• Manufacturer Part Number: FQPF6N80
• Description: MOSFET N-CH 800V 3.3A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.65A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
10
V
J
vs Temperature
DS
, Junction Temperature [
1
, Drain-Source Voltage [V]
0
Operation in This Area
is Limited by R
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .2
DC
o
0 .1
50
DS(on)
C
o
C
100 ms
10
Figure 11. Transient Thermal Response Curve
2
10 ms
100
1 0
(Continued)
1 ms
o
- 4
C]
s i n g l e p u ls e
100μ s
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
150
= 0 V
10
3
1 0
- 3
200
1 0
- 2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
※ N o te s :
- 1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
-50
DM
θ J C
J M
50
- T
( t) = 2 .4 5 ℃ /W M a x .
vs Case Temperature
C
T
T
= P
J
t
vs Temperature
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
D M
0
75
* Z
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.9 A
= 10 V
Rev. A, September 2000
200
150