FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 146
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Bridge Rectifiers (Continued)
GBPC2510
GBPC35005
GBPC3501
GBPC3502
GBPC3504
GBPC3506
GBPC3508
GBPC3510
GGBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
GBU6A
GBU6B
GBU6D
GBU6G
GBU6J
GBU6K
GBU6M
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
KBL005
KBL01
KBL02
KBL04
KBL06
GBU
KBL
Products
V
RRM
1000
1000
1000
1000
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
50
50
50
50
50
(V)
I
F(AV)
25
35
35
35
35
35
35
35
2-141
4
4
4
4
4
4
4
6
6
6
6
6
6
6
8
8
8
8
8
8
4
4
4
4
4
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Diodes and Rectifiers
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