FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 205

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Fast Rectifier
RHR G
30
(Continued)
60 CC
CC: Common Cathode
S: Surface Mount
i.e., (600)
D: 2 & 3 Lead TO-251/TO-252
1S: 2 & 3 Lead TO-262/TO-263
P: 2 & 3 Lead TO-220
G: 2 & 3 Lead TO-247
H: 2 & 3 Lead TO-218
Y: 2 & 3 Lead TO-264
U: 1 Lead TO-218
RHR: Rectifier HYPERFAST Recovery
RUR: Rectifier UltraFast Recovery
MUR: Motorola Direct Cross
Options
Voltage Rating/10
Continuous Current Rating
Package Types
Recovery Speed
8-12
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