FDP8442 Fairchild Semiconductor, FDP8442 Datasheet

MOSFET N-CH 40V 80A TO-220AB

FDP8442

Manufacturer Part Number
FDP8442
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8442

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
12200pF @ 25V
Power - Max
254W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
254 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP8442
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2007 Fairchild Semiconductor Corporation
FDP8842 Rev. A
FDP8442
N-Channel PowerTrench
40V, 80A, 3.1mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(10)
rr
Body Diode
= 2.3mΩ at V
= 181nC at V
GS
GS
= 10V, I
= 10V
D
= 80A
®
MOSFET
1
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
June 2007
www.fairchildsemi.com

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FDP8442 Summary of contents

Page 1

... FDP8442 N-Channel PowerTrench 40V, 80A, 3.1mΩ Features Typ r = 2.3mΩ 10V, I DS(on) GS Typ Q = 181nC 10V g(10) GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2007 Fairchild Semiconductor Corporation FDP8842 Rev. A ® ...

Page 2

... STG Thermal Characteristics R Thermal Resistance Junction to Case θJC R Thermal Resistance Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDP8442 FDP8442 Electrical Characteristics Symbol Parameter Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDP8842 Rev 25° ...

Page 4

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 100 T , CASE TEMPERATURE C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.20 0.10 0.1 ...

Page 5

Typical Characteristics 4000 1000 100 10 LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS MAX RATED AREA MAY BE LIMITED BY r DS(on 0 DRAIN TO ...

Page 6

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -80 - JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40000 10000 1000 C rss f = 1MHz ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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