FDP8442 Fairchild Semiconductor, FDP8442 Datasheet
FDP8442
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FDP8442 Summary of contents
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... FDP8442 N-Channel PowerTrench 40V, 80A, 3.1mΩ Features Typ r = 2.3mΩ 10V, I DS(on) GS Typ Q = 181nC 10V g(10) GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2007 Fairchild Semiconductor Corporation FDP8842 Rev. A ® ...
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... STG Thermal Characteristics R Thermal Resistance Junction to Case θJC R Thermal Resistance Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDP8442 FDP8442 Electrical Characteristics Symbol Parameter Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current ...
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... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDP8842 Rev 25° ...
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Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 100 T , CASE TEMPERATURE C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.20 0.10 0.1 ...
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Typical Characteristics 4000 1000 100 10 LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS MAX RATED AREA MAY BE LIMITED BY r DS(on 0 DRAIN TO ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -80 - JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40000 10000 1000 C rss f = 1MHz ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...