FDP8442 Fairchild Semiconductor, FDP8442 Datasheet - Page 6

• Manufacturer Part Number: FDP8442
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 12200pF @ 25V
• Power - Max: 254W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8842 Rev. A
Typical Characteristics
Figure 11.
Figure 13.
10000
40000
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
100
-80
0.1
f = 1MHz
V
Normalized Gate Threshold Voltage vs
GS
-40
= 0V
Junction Temperature
Capacitance vs Drain to Source
V
T
J
DS
, JUNCTION TEMPERATURE
, DRAIN TO SOURCE VOLTAGE
0
Voltage
C
1
rss
40
80
C
120
oss
10
(
V
I
C
D
o
GS
C
iss
=
160
)
250
=
(
V
V
DS
µ
)
A
200
50
6
Figure 14.
Breakdown Voltage vs Junction Temperature
10
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
= 80A
I
D
Gate Charge vs Gate to Source Voltage
= 250
-40
T
µ
J
50
A
, JUNCTION TEMPERATURE
Q
g
, GATE CHARGE(nC)
0
V
DD
40
100
= 15V
80
V
DD
150
www.fairchildsemi.com
120
= 25V
V
DD
= 20V
(
o
C
160
)
200
200