This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Dimensional Outline and Pad Layout NOTES: A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION, MO-229, DATED 11/2001. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 FDMB506P Rev C2(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -3. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDMB506P Rev C2( 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 160°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 160 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDMB506P Rev C2(W) 20 1000 ...
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