IRFN214BTA_FP001 Fairchild Semiconductor, IRFN214BTA_FP001 Datasheet

MOSFET N-CH 250V 0.6A TO-92

IRFN214BTA_FP001

Manufacturer Part Number
IRFN214BTA_FP001
Description
MOSFET N-CH 250V 0.6A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFN214BTA_FP001

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 300mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
10.5nC @ 10V
Input Capacitance (ciss) @ Vds
275pF @ 25V
Power - Max
1.8W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
IRFN214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JL
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
L
= 25°C)
Parameter
Parameter
T
A
A
A
IRFN Series
= 25°C unless otherwise noted
TO-92
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 0.6A, 250V, R
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
DS(on)
Typ
--
--
G
!
!
-55 to +150
IRFN214B
= 2.0
0.18
0.01
300
250
0.6
0.4
2.4
0.6
4.8
1.8
45
! "
! "
30
!
!
!
!
S
D
@V
"
"
"
"
"
"
Max
100
GS
70
= 10 V
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
Rev. A, May 2004
°C
°C
W
V
A
A
A
V
A

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IRFN214BTA_FP001 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Lead JL R Thermal Resistance, Junction-to-Ambient JA ©2004 Fairchild Semiconductor Corporation Features • 0.6A, 250V, R • Low gate charge ( typical 8.1 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-92 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 200mH 0.6A 50V 2.8A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted A Test Conditions 250 250 A, Referenced to 25° 250 200 125° ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 0 10 150 25 Notes : ※ 1. 250µs Pulse Test ℃ Figure 2. Transfer Characteristics 10V Note : ℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 0.6 0.5 100 0.4 100 0.3 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, May 2004 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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