IRFS614B_FP001 Fairchild Semiconductor, IRFS614B_FP001 Datasheet - Page 4

• Manufacturer Part Number: IRFS614B_FP001
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS614B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 22W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
1.2
1.1
1.0
0.9
0.8
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
25
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
vs Temperature
J
, Junction Temperature [
DS
T
0
C
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
※ Notes :
for IRF614B
, Case Temperature [ ℃ ]
10
1. T
2. T
3. Single Pulse
1
75
C
J
= 150
= 25
o
C
o
DS(on)
C
50
DC
100
100
10 ms
(Continued)
o
C]
※ Notes :
10
1 ms
1. V
2. I
2
D
G S
= 250 μ A
125
= 0 V
150
100 s
200
150
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
vs Temperature
J
DS
, Junction Temperature [
for IRFS614B
0
, Drain-Source Voltage [V]
※ Notes :
Operation in This Area
is Limited by R
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
o
C
o
C
50
DS(on)
DC
100 ms
100
o
10 ms
C]
10
2
1 ms
※ Notes :
1. V
2. I
150
D
GS
= 1.4 A
= 10 V
Rev. A, November 2001
200