IRFS614B_FP001 Fairchild Semiconductor, IRFS614B_FP001 Datasheet - Page 5

• Manufacturer Part Number: IRFS614B_FP001
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS614B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 22W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS614B
-1
-2
Figure 11-1. Transient Thermal Response Curve for IRF614B
0
1 0
- 1
0
1 0
-5
- 5
0 . 0 1
0 . 0 2
0 . 0 5
D = 0 .5
0 . 1
D = 0 .5
0 . 0 2
0 . 2
0 . 0 5
0 . 0 1
0 . 2
0 . 1
1 0
1 0
s in g le p u ls e
-4
- 4
(Continued)
s in g le p u ls e
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
- 3
1 0
1 0
-2
- 2
※ N o te s :
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
1 0
※ N o te s :
-1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
P
θ J C
J M
P
DM
DM
- T
θ J C
J M
(t) = 3 .1 4 ℃ /W M a x .
C
- T
(t) = 5 .5 8 ℃ /W M a x .
= P
C
= P
D M
t
1
t
1
t
* Z
1 0
D M
t
2
1 0
2
1
θ J C
* Z
0
/t
0
2
1
θ J C
(t)
/t
2
(t)
1 0
1 0
1
1
Rev. A, November 2001