MMBT6428 Fairchild Semiconductor, MMBT6428 Datasheet
MMBT6428
Manufacturer Part Number
MMBT6428
Description
TRANSISTOR GP NPN AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT6428.pdf
(4 pages)
Specifications of MMBT6428
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
700MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage(max)
60V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
250
Power Dissipation
350mW
Frequency (max)
700MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Maximum Operating Frequency
700 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT6428TR
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©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device designed for general pupose amplifier applications at
• Sourced from process 10.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
Electrical Characteristics
*Pulse Test: Pulse Width
V
V
I
T
Off Characteristics
V
V
I
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
C
C
CEO
CBO
EBO
T
collector currents to 300mA
FE
J
CEO
CBO
(BR)CEO
(BR)CBO
CE
BE
obo
ibo
Symbol
, T
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
C
=25 C unless otherwise noted
Parameter
T
C
MMBT6428
=25 C unless otherwise noted
- Continuous
I
I
V
V
V
V
V
V
V
I
I
V
V
f = 100MHz
V
V
C
C
C
C
CE
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
= 1.0mA, I
= 10mA, I
= 100mA, I
= 100 A, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 0.5V, I
= 30V, I
= 30V, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 10V, I
Test Condition
B
B
E
E
B
B
C
C
C
E
C
C
C
C
B
= 0.5mA
= 0
= 0
= 0, f = 1.0MHz
= 0
= 0
= 1.0mA
= 1.0mA,
= 0
= 10 A
= 100 A
= 1.0mA
= 10mA
= 0, f = 1.0MHz
= 5.0mA
1. Base 2. Emitter 3. Collector
- 55 ~ 150
3
Value
500
50
60
0.56
Min.
250
250
250
250
100
50
60
1
Max.
0.66
650
700
0.1
0.2
0.6
3.0
8.0
SOT-23
10
10
Mark: 1K
Rev. A, October 2002
2
Units
mA
V
V
Units
MHz
C
nA
nA
pF
pF
V
V
V
V
A
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MMBT6428 Summary of contents
Page 1
... Base-Emitter On Voltage BE Small Signal Characteristics f Current gain Bandwidth Product T C Output Capacitance obo C Input Capacitance ibo *Pulse Test: Pulse Width 300 s, Duty Cycle ©2002 Fairchild Semiconductor Corporation MMBT6428 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 1.0mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 350 mW 2.8 mW/ C C/W 357 C/W Rev ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, October 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...