BD437S Fairchild Semiconductor, BD437S Datasheet - Page 3

• Manufacturer Part Number: BD437S
• Description: TRANSISTOR NPN 45V 4A TO-126
• Manufacturer: Fairchild Semiconductor

Specifications of BD437S

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Power - Max: 36W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 30
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
1
1
0.01
0.0
1
Figure 3. Base-Emitter On Voltage
I
I
C
C
Max. (Continuous)
MAX. (Pulsed)
Figure 5. Safe Operating Area
0.3
V
Figure 1. DC current Gain
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
I
0.1
C
0.5
[A], COLLECTOR CURRENT
[V], BASE-EMITTER VOLTAGE
0.8
BD435
BD437
BD433
1.0
10
1
1.3
10
1.5
V
V
10 s
CE
CE
1.8
= 1V
= 1V
100
100
2.0
Figure 2. Collector-Emitter Saturation Voltage
1000
100
0.01
10
0.1
1
48
42
36
30
24
18
12
0.1
6
0
Figure 4. Collector-Base Capacitance
1
0.1
0
25
Figure 6. Power Derating
V
CB
[V], COLLECTOR BASE VOLTAGE
I
1
50
C
T
[A], COLLECTOR CURRENT
C
[
o
C], CASE TEMPERATURE
75
10
100
1
125
100
150
I
C
175
= 10 I
Rev. A1, June 2001
B
1000
200
10