KSD288YTU Fairchild Semiconductor, KSD288YTU Datasheet
KSD288YTU
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KSD288YTU Summary of contents
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... Collector-Emitter Breakdown Voltage CEO BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE h Classification FE Classification h FE ©2000 Fairchild Semiconductor International KSD288 = =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =500 =10mA ...
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... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 o 1.Tc=25 C 2.*Single Pulse Thermal limitation 1 S/B limitation 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 10000 = 8mA I = 7mA B 1000 I = 6mA 5mA 4mA 3mA 100 2mA ...
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... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...